Structural and Dielectric Properties of Ba(Ti<sub>1-x</sub>Sn<sub>x</sub>)O<sub>3</sub> Thin Films

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  • Tsukada Mitsuo
    NTT LSI Laboratories, 3–1 Morinosato Wakamiya, Atsugi, Kanagawa 243–01, Japan
  • Mukaida Masashi
    NTT LSI Laboratories, 3–1 Morinosato Wakamiya, Atsugi, Kanagawa 243–01, Japan
  • Miyazawa Shintaro
    NTT LSI Laboratories, 3–1 Morinosato Wakamiya, Atsugi, Kanagawa 243–01, Japan

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  • Structural and Dielectric Properties of Ba(Ti1-xSnx)O3 Thin Films.
  • Structural and Dielectric Properties of

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Close correlation between the dielectric constant and the degree of preferential (111) orientation is found for Ba(Ti0.85Sn0.15)O3 ( BTS15) solid-solution thin films deposited on a Pt/Ti/SiO2/Si(100) substrate by pulsed laser deposition. It is shown that substrate temperature is the principal factor which determines orientation and crystalline quality of the films. Substrate temperatures higher than 700° C are required to achieve (111) orientation with good crystalline quality. BTS15 films with strong (111) orientation have large dielectric constant which reaches 2500 at 22° C. These films exhibit a D-E hysteresis loop, but small remanent polarization of 0.89 µ C/cm2 and coercive field of 3.2 kV/cm are obtained at 18° C. Films having the composition with lower Sn ratio exhibit larger remanent polarization. Causal relationships among the dominant film orientation, crystalline quality and dielectric constant are discussed.

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