GaAs Single Electron Transistors Fabricated by Selective Area Metalorganic Vapor Phase Epitaxy and Their Application to Single Electron Logic Circuits.
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- Nakajima Fumito
- Research Center for Interface Quantum Electronics (RCIQE), Hokkaido University, North 13 West 8, Sapporo 060–8628, Japan
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- Kumakura Kazuhide
- Research Center for Interface Quantum Electronics (RCIQE), Hokkaido University, North 13 West 8, Sapporo 060–8628, Japan
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- Motohisa Junichi
- Research Center for Interface Quantum Electronics (RCIQE), Hokkaido University, North 13 West 8, Sapporo 060–8628, Japan
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- Fukui Takasi
- Research Center for Interface Quantum Electronics (RCIQE), Hokkaido University, North 13 West 8, Sapporo 060–8628, Japan
書誌事項
- タイトル別名
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- GaAs Single Electron Transistors Fabricated by Selective Area
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GaAs single electron transistors (SETs) are successfully fabricated using selectively grown GaAs/AlGaAs modulation doped structures by metalorganic vapor phase epitaxy (MOVPE) on (001) GaAs masked substrates. SET shows clear Coulomb oscillations and Coulomb gaps modulated by gate voltage. GaAs single electron tunneling inverter circuits having a SET and a variable load resistance are also formed. The operation of a resistance-load inverter circuit is confirmed at 1.9 K from the transport properties of this SET and input-output characteristics.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 38 (1B), 415-417, 1999
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681229985408
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- NII論文ID
- 110003955712
- 130004525786
- 210000045465
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- NII書誌ID
- AA10457675
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- COI
- 1:CAS:528:DyaK1MXhsFWiurk%3D
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 4662720
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可