Effects of High Pressure and High-Magnetic Field on the Energy Gap in a Kondo Semiconductor YbB_<12> :

• IGA,Fumitoshi

  Department of Quantum Matter, ADSM, Hiroshima University

• LE HIHAN,Tristan

  European Synchrotron Radiation Facility

• BRAITHWATE,Daniel

  DRFMC

• Flouquet,Jacques

  SPSMS, CEA

• IDIRI,Monique

  Grenoble

• KINDO,Koichi

  DRFMC

• TAKAMOTO,Naoki

  SPSMS, CEA

• OGURO,Isamu

  Grenoble

• SHIMIZU,Naoki

  European Synchrotron Radiation Facility

• HIURA,Sayaka

  Research Center for Material Science at Extreme Conditions, Osaka University

• TAKABATAKE,Toshiro

  DRFMC

抄録

High-pressure X-ray diffraction study of YbB_<12> up to 62.5 GPa has revealed an unusual hardening of the lattice above 10 GPa. Under this pressure, the activation energy in the electrical resistivity also changes. The high-field magnetization measurements have shown that a first-order type metamagnetic transition occurs at distinct critical fields; 47 T for B //<100> and 54 T for B//<100> and <111>.

収録刊行物

• JJAP series

  JJAP series 11 88-90, 1999-02-08

  Japanese Journal of Applied Physics

キーワード

• high pressure
• high magnetic field
• energy gap
• Kondo semiconductor
• YbB<12>

詳細情報

• CRID: 1540009770354231808
• NII論文ID: 110003958921
• NII書誌ID: AA11020413
• Web Site: http://dl.ndl.go.jp/info:ndljp/pid/10472877
• 本文言語コード: en
• データソース種別:
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  • CiNii Articles