Highly-Strained In<I><SUB>x</SUB></I>Ga<SUB>1−<I>x</I></SUB>As/GaAs Multiple Quantum Wells for Electroabsorption Modulation

• Niki Shigeru

  Department of Electrical and Computer Engineering, Mail code R-007, University of California at San Diego

• Cheng An-nien

  Department of Electrical and Computer Engineering, Mail code R-007, University of California at San Diego

• Chang Jessica C. P.

  Department of Electrical and Computer Engineering, Mail code R-007, University of California at San Diego

• Chang William S. C.

  Department of Electrical and Computer Engineering, Mail code R-007, University of California at San Diego

• Wieder Harry H.

  Department of Electrical and Computer Engineering, Mail code R-007, University of California at San Diego

抄録

The properties of strained In_xGa_1−xAs/GaAs multiple quantum wells with indium concentrations of up to 0.28 were investigated experimentally for surface-normal electroabsorption modulator applications in the 0.9 to 1.1 μm wavelength range. A 0.5 μm-thick alloy buffer (In_yGa_1−yAs or In_yAl_1−yAs) was employed in order to relax the in-plane lattice constant of the epitaxial layers from that of GaAs, with two sets of QW layers sharing the strain in opposite directions (oscillating compressive/tensile strain). Distinct exciton peaks and clear quantum confined Stark effect with the maximum Δα=5900 (cm⁻¹) were obtained from such structures at λ=1.05–1.09 μm, indicating good material quality.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 29 (10), L1833-L1835, 1990

  社団法人応用物理学会

キーワード

• strained layer
• electroabsorption
• multiple quantum well
• InGaAs/GaAs
• molecular beam epitaxy

詳細情報

• CRID: 1570572702471076736
• NII論文ID: 110003963370
• NII書誌ID: AA10650595
• 本文言語コード: en
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