Ion-Beam-Assisted Nanocrystal Formation in Silicon Implanted with High Doses of Pb〔+〕 and Bi〔+〕 Ions

• Kalitzova Maria

  Institute of Solid State Physics, Bulgarian Academy of Sciences, BG-1784 Sofia, Bulgaria

• Zollo Giuseppe

  Dipartimento di Energetica, Universita' degli Studi “La Sapienza” di Roma and INFM-unita' Roma1, via A. Scarpa 14, 00161 Roma, Italy

• Yankov Rossen

  Institute of Solid State Physics, Bulgarian Academy of Sciences, BG-1784 Sofia, Bulgaria

• Angelov Christo

  Institute for Nuclear Research and Nuclear Energy, Bulgarian Academy of Sciences, BG-1784, Sofia, Bulgaria

• Simov Stephan

  Institute of Solid State Physics, Bulgarian Academy of Sciences, BG-1784 Sofia, Bulgaria

• Pizzuto Cesare

  Dipartimento di Energetica, Universita' degli Studi “La Sapienza” di Roma and INFM-unita' Roma1, via A. Scarpa 14, 00161 Roma, Italy

• Faure Joel

  Unité de Thermique et d'Analyse Physique, Laboratoire de Microscopie Electronique et Tunnel, Universit'e de Reims, INSERM U 314 UFR Sciences, 51100 Reims, Cedex, France

• Kilian Lilian

  Unité de Thermique et d'Analyse Physique, Laboratoire de Microscopie Electronique et Tunnel, Universit'e de Reims, INSERM U 314 UFR Sciences, 51100 Reims, Cedex, France

• Bonhomme Pierre

  Unité de Thermique et d'Analyse Physique, Laboratoire de Microscopie Electronique et Tunnel, Universit'e de Reims, INSERM U 314 UFR Sciences, 51100 Reims, Cedex, France

• Manno Daniela

  Dipartimento di Scienza dei Materiali, Universita' di Lecce and INFM-unita' di Lecce, via per Arnesano 73100 Lecce, Italy

• Voelskow Matthias

  Institute fur Ionenstrahlphysics und Materialforshung, Forschungszentrum Rossendorf, P.O. Box 10109, D-01314 Dresden, Germany

• Vitali Gianfranco

  Dipartimento di Energetica, Universita' degli Studi “La Sapienza” di Roma and INFM-unita' Roma1, via A. Scarpa 14, 00161 Roma, Italy

書誌事項

タイトル別名

• Ion-Beam-Assisted Nanocrystal Formation in Silicon Implanted with High Doses of Pb+ and Bi+ Ions.
• Ion-Beam-Assisted Nanocrystal Formation in Silicon Implanted with High Doses of Pb⁺ and Bi⁺ Ions

抄録

In this paper we discuss ion-beam-assisted nanocrystal nucleation in amorphized silicon (a-Si) layers produced by high-dose implantation of Pb⁺ and Bi⁺. (100)-oriented Si wafers were implanted at room temperature (RT) with 50 keV Pb⁺ and Bi⁺ ions at doses ranging from 5 × 10¹³ to 1 × 10¹⁸ cm^-2 and a constant ion current density of 10 μA cm^-2. The resulting structures were studied by conventional transmission electron microscopy (CTEM), high resolution transmission electron microscopy (HRTEM) and Rutherford backscattering spectroscopy (RBS) in combination with computer simulations. The dynamics of the ion-beam-induced crystallization of new phases and precipitates evolution in the implanted layer were studied as a function of implant dose. It is established that the front of the new phase crystallization (cubic Pb and hexagonal Bi nanocrystals) starts approximately at the peaks of the implanted species profiles; the crystallography of the nucleated nanocrystal is examined as a function of the dose.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 40 (10), 5841-5849, 2001

  The Japan Society of Applied Physics

キーワード

• ion implantation
• precipitation
• nanoclusters
• silicon
• electron microscopy

詳細情報

• CRID: 1390282681228585600
• NII論文ID: 110004043353
• NII論文ID: 210000050098
• NII論文ID: 130004527980
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.40.5841
• ISSN: 13474065
• ISSN: 00214922
• NDL書誌ID: 5948484
• Web Site: http://id.ndl.go.jp/bib/5948484
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I5948484
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.40.5841
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.40.5841/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可