Microwave-Excited Large-Area Plasma Source Using a Slot Antenna.

• Kanoh Masaaki

  Corporate Manufacturing Engineering Center, Toshiba Corporation, 33, Shin-Isogo-cho, Isogo-ku, Yokohama 235-0017, Japan

• Aoki Katsuaki

  Corporate Manufacturing Engineering Center, Toshiba Corporation, 33, Shin-Isogo-cho, Isogo-ku, Yokohama 235-0017, Japan

• Yamauchi Takeshi

  Corporate Manufacturing Engineering Center, Toshiba Corporation, 33, Shin-Isogo-cho, Isogo-ku, Yokohama 235-0017, Japan

• Kataoka Yoshinori

  Corporate Manufacturing Engineering Center, Toshiba Corporation, 33, Shin-Isogo-cho, Isogo-ku, Yokohama 235-0017, Japan

抄録

We developed a stable and uniform large-area plasma source using surface waves generated from a slot antenna. The propagation of microwaves radiating from the slot antenna was studied and the optimal shape of the slot antenna for uniform plasma generation was determined. The characteristics of a dry etching process using the plasma were also evaluated. It was confirmed that some of the microwaves which radiated from the slot antenna propagate as surface waves in the dielectric window. By adjusting the angle of the slot antenna, the plasma was generated in the direction perpendicular to the axis of the slot antenna. An Ar plasma electron density of the order of 10¹¹/cm³, which exceeds the electron density required for blocking the propagation of microwaves (cutoff frequency), was obtained. On the basis of these observations, it was considered that the microwaves radiating from the slot antenna propagate in the form of surface waves in the direction perpendicular to the axis of the slot antenna, and generate surface-wave plasma. The results of the measurements of the etching rate and ashing rate yielded a poly-Si etching rate of 470 nm/min or greater with a uniformity of 5% or better, and an ashing rate of 3000 nm/min or greater with a uniformity of 7% or better. The poly-Si etching rate was approximately twofold and the ashing rate was approximately fivefold the corresponding values obtained by the conventional chemical dry etching method.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 39 (9A), 5292-5296, 2000

  The Japan Society of Applied Physics

キーワード

• microwave plasma
• surface wave
• slot antenna
• high-density plasma
• dry etching
• ashing
• optical emission

詳細情報

• CRID: 1390001206254055424
• NII論文ID: 210000047766
• NII論文ID: 30021820469
• NII論文ID: 110004055832
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.39.5292
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/13474065
• NDL書誌ID: 5523161
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I5523161
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.39.5292
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.39.5292/pdf
• 本文言語コード: en
• データソース種別:
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