Evaluation of Overlay Accuracy for 100-nm Ground Rule in Proximity X-Ray Lithography.

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  • Aoyama Hajime
    Super-fine SR Lithography Lab., Association of Super-Advanced Electronics Technologies (ASET),<BR> c/o NTT Telecommunications Energy Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
  • Fukuda Makoto
    NTT Telecommunications Energy Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
  • Mitsui Souichirou
    Super-fine SR Lithography Lab., Association of Super-Advanced Electronics Technologies (ASET),<BR> c/o NTT Telecommunications Energy Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
  • Taguchi Takao
    Super-fine SR Lithography Lab., Association of Super-Advanced Electronics Technologies (ASET),<BR> c/o NTT Telecommunications Energy Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
  • Suzuki Masanori
    NTT Telecommunications Energy Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
  • Haga Tsuneyuki
    NTT Telecommunications Energy Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
  • Morita Hirofumi
    NTT Telecommunications Energy Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
  • Matsui Yasuji
    Super-fine SR Lithography Lab., Association of Super-Advanced Electronics Technologies (ASET),<BR> c/o NTT Telecommunications Energy Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

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An evaluation was made of the overall overlay accuracy of proximity X-ray lithography (PXL), which includes mask placement error, the alignment error of the stepper, and deformation arising from wafer processing. The relative placement accuracy of X-ray masks between first and second layers was below 22 nm (3σ) for both the x- and y-directions. Exposure was carried out using an optical heterodyne alignment system and magnification correction, and an overlay accuracy below 30 nm (mean ± 3σ) was obtained. The overlay error was broken down into various components to estimate the error budget. The analysis revealed the alignment error of the X-ray stepper to be about 25 nm, and the common in-plane deformation to be about 11 nm. The common in-plane deformation was almost the same as the relative mask placement accuracy without scale error. The accuracy obtained in this study clearly demonstrates the suitability of PXL for the fabrication of 100-nm ground rule devices. Moreover, the analysis indicates that it is also applicable to the 70-nm technology node.

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