Determination of Second-Order Nonlinear Optical Susceptibility of GaN Films on Sapphire.
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- Fujita Takashi
- Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima, 2-1 Minamijosanjima, Tokushima 770-8506, Japan
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- Hasegawa Tatsuo
- Department of Electrical Engineering, Anan College of Technology, 265 Aoki, Mino-bayashi, Anan, Tokushima 774-0017, Japan
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- Haraguchi Masanobu
- Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima, 2-1 Minamijosanjima, Tokushima 770-8506, Japan
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- Okamoto Toshihiro
- Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima, 2-1 Minamijosanjima, Tokushima 770-8506, Japan
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- Fukui Masuo
- Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima, 2-1 Minamijosanjima, Tokushima 770-8506, Japan
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- Nakamura Syuji
- Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan
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抄録
The second-order nonlinear susceptibilities of GaN films on sapphire were determined by the Maker fringe technique. In deriving the second-harmonic intensity, the bound wave propagating from the GaN-air interface to the GaN-sapphire interface and that propagating in the opposite direction were taken into account. We obtained |χ(2)zxx|=14.7±0.2 pm/V, |χ(2)xzx|=14.4±0.2 pm/V and |χ(2)zzz|=29.7±0.7 pm/V for the GaN film with a thickness of 2.55 μm using fundamental light with a wavelength of 1.064 μm.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 39 (5A), 2610-2613, 2000
The Japan Society of Applied Physics
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詳細情報
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- CRID
- 1390282681227728256
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- NII論文ID
- 210000047126
- 110004076762
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 5384957
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可