Determination of Second-Order Nonlinear Optical Susceptibility of GaN Films on Sapphire.

  • Fujita Takashi
    Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima, 2-1 Minamijosanjima, Tokushima 770-8506, Japan
  • Hasegawa Tatsuo
    Department of Electrical Engineering, Anan College of Technology, 265 Aoki, Mino-bayashi, Anan, Tokushima 774-0017, Japan
  • Haraguchi Masanobu
    Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima, 2-1 Minamijosanjima, Tokushima 770-8506, Japan
  • Okamoto Toshihiro
    Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima, 2-1 Minamijosanjima, Tokushima 770-8506, Japan
  • Fukui Masuo
    Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima, 2-1 Minamijosanjima, Tokushima 770-8506, Japan
  • Nakamura Syuji
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan

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抄録

The second-order nonlinear susceptibilities of GaN films on sapphire were determined by the Maker fringe technique. In deriving the second-harmonic intensity, the bound wave propagating from the GaN-air interface to the GaN-sapphire interface and that propagating in the opposite direction were taken into account. We obtained |χ(2)zxx|=14.7±0.2 pm/V, |χ(2)xzx|=14.4±0.2 pm/V and |χ(2)zzz|=29.7±0.7 pm/V for the GaN film with a thickness of 2.55 μm using fundamental light with a wavelength of 1.064 μm.

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