Localization and Quantum Hall Effect in Two-Dimensional Systems Under Strong Magnetic Fields(Transport and Fermiology)

• Shinji Kawaji

• Junichi Wakabayashi

• Toru Okamoto

• Atsuyuki Fukano

• Katsunobu Hirakawa

• Makoto Nagata

• Kazuhiko Hirakawa

• Hiroyuki Sakaki

• Yoji Koike

• Takayuki Goto

• Tetsuro Fukase

抄録

Experimental researches of quantum transport properties of semiconductor two-dimensional electron systems in Si-MOSFETs and GaAs/AlGaAs heterostructures in high magnetic fields up to 27 T and at low temperatures down to 20 mK are performed. Analysis of the Hall conductivity of Si-MOSFETs based on a mobility edge model shows that the temperature dependence of the mobility edge can not be explained by existing theory of localization. The fractional quantum Hall effect is observed at the filling factor of 1/7 in heterostructures. Sample size dependence and magnetic field dependence of the breakdown of the integral quantum Hall effect in heterostructures reveal that the Hall current is carried not by the edge states but by the extended states in the localization in the bulk of the two-dimensional systems.

収録刊行物

• 東北大学研究所報告. A集, 物理学・化学・冶金学 = Science reports of the Research Institutes, Tohoku University. Ser. A, Physics, chemistry and metallurgy

  東北大学研究所報告. A集, 物理学・化学・冶金学 = Science reports of the Research Institutes, Tohoku University. Ser. A, Physics, chemistry and metallurgy 38 (2), 289-296, 1993-06-30

  Tohoku University

詳細情報

• CRID: 1570854176977777920
• NII論文ID: 110004640443
• NII書誌ID: AA00836167
• ISSN: 00408808
• Web Site: http://hdl.handle.net/10097/28446
• 本文言語コード: en
• データソース種別:
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