Fabrication of Double-Sided YBa_2Cu_3O_7 Films on CeO_2-Buffered Sapphire Substrates by MOD Process
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- SOHMA Mitsugu
- National Institute of Advanced Industrial Science and Technology (AIST)
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- KAMIYA Kunio
- National Institute of Advanced Industrial Science and Technology (AIST)
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- TSUKADA Kenichi
- National Institute of Advanced Industrial Science and Technology (AIST)
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- YAMAGUCHI Iwao
- National Institute of Advanced Industrial Science and Technology (AIST)
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- KONDO Wakichi
- National Institute of Advanced Industrial Science and Technology (AIST)
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- MIZUTA Susumu
- National Institute of Advanced Industrial Science and Technology (AIST)
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- MANABE Takaaki
- National Institute of Advanced Industrial Science and Technology (AIST)
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- KUMAGAI Toshiya
- National Institute of Advanced Industrial Science and Technology (AIST)
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抄録
Double-sided YBa_2Cu_3O_7 (YBCO) films were successfully prepared on 50-mm-diameter CeO_2-buffered sapphire substrates by metalorganic deposition (MOD) process using an acetylacetonate coating solution. Mapping analysis of superconducting current densities (J_c) at 77.3K revealed that J_c values of the double-sided films indicated in excess of 2 MA/cm^2 in the center parts with a small decrease of J_c at the outer side of the specimens. The J_c values of one side (A) are higher than those of the other side (B). Microwave surface resistance (R_s) of sides A and B of the film exhibited 0.57 and 0.60mΩ, respectively, at 70K (12GHz). The difference in the R_s values should be attributed to the slight difference in the J_c values, which arose from the surface morphology of the CeO_2 buffer layer and heat treatment conditions during the firing process in MOD.
収録刊行物
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- IEICE transactions on electronics
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IEICE transactions on electronics 89 (2), 182-185, 2006-02-01
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詳細情報 詳細情報について
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- CRID
- 1570291227007976320
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- NII論文ID
- 110004657601
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- NII書誌ID
- AA10826283
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- ISSN
- 09168524
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- 本文言語コード
- en
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- データソース種別
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- CiNii Articles