Disorder-Driven Quantum Phase Transition from Antiferromagnetic Metal to Insulating State in Multilayered High-<i>T</i><sub>c</sub> Cuprate (Cu,C)Ba<sub>2</sub>Ca<sub>4</sub>Cu<sub>5</sub>O<sub><i>y</i></sub>

  • Mukuda Hidekazu
    Department of Materials Engineering Science, Osaka University
  • Abe Machiko
    Department of Materials Engineering Science, Osaka University
  • Shimizu Sunao
    Department of Materials Engineering Science, Osaka University
  • Kitaoka Yoshio
    Department of Materials Engineering Science, Osaka University
  • Iyo Akira
    National Institute of Advanced Industrial Science and Technology (AIST)
  • Kodama Yasuharu
    National Institute of Advanced Industrial Science and Technology (AIST)
  • Kito Hijiri
    National Institute of Advanced Industrial Science and Technology (AIST)
  • Tanaka Yasutomo
    National Institute of Advanced Industrial Science and Technology (AIST)
  • Tokiwa Kazuyasu
    Department of Applied Electronics, Tokyo University of Science
  • Watanabe Tsuneo
    Department of Applied Electronics, Tokyo University of Science

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  • Disorder-Driven Quantum Phase Transition from Antiferromagnetic Metal to Insulating State in Multilayered High-Tc Cuprate (Cu,C)Ba2Ca4Cu5Oy

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We report on superconducting (SC) characteristics for the oxygen-reduced Cu-based five-layered high-temperature superconductor (Cu,C)Ba2Ca4Cu5Oy [Cu-1245(OPT)], which includes pyramidal outer planes (OPs) and square inner planes (IPs). As a result of a reduction in the carrier density, the superconductivity for Cu-1245(OPT) occurs at the nearly optimally doped OPs with Tc=98 K. The onset of static antiferromagnetic (AFM) order at IPs is evidenced from the observation of zero-field Cu NMR at low temperatures, although the SC transition at OPs emerges below Tc=98 K. A disorder, which is actually mapped onto the underdoped IPs, is demonstrated to cause a quantum phase transition from AFM metal to insulating state in an underdoped regime. This finding reinforces that an AFM metallic phase exists between the AFM insulating phase and the SC phase for the ideally flat CuO2 plane without disorder, as reported for the IPs in optimally doped Hg-1245 with the same doping level as in Cu-1245(OPT).

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