Effect of annealing on the microstructure of FePt thin film
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- MURAYAMA Norio
- Faculty of Science and Engineering, Chuo Univ.
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- TAKAHASHI Yoshio
- Central Research Lab., Hitachi, Ltd.
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- FUTAMOTO Masaaki
- Faculty of Science and Engineering, Chuo Univ.
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FePt-alloy thin films sputter deposited at room temperature on surface oxidized Si substrates were annealed at 300-500℃ in vacuum. The film microstructure was observed by using a transmission electron microscope (TEM) in the plan-view and the cross-sectional view to investigate the crystal grain growth and the ordering processes of FePt-alloy thin film. The results show that atom rearrangement in the crystal grain is going on while increasing the crystal grain diameter.
収録刊行物
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- 電子情報通信学会技術研究報告. MR, 磁気記録
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電子情報通信学会技術研究報告. MR, 磁気記録 106 (335), 73-74, 2006-11-02
一般社団法人電子情報通信学会
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詳細情報 詳細情報について
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- CRID
- 1573950401578586880
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- NII論文ID
- 110005717319
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- NII書誌ID
- AN10013050
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- 本文言語コード
- en
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- データソース種別
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- CiNii Articles