書誌事項
- タイトル別名
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- 01aA02 Growth of homogeneous InGaSb crystals using heat pulse technique(NCCG-36)
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The homogeneous InGaSb ternary alloy crystals were grown by the temperature gradient method. During the InGaSb crystal growth, heat pulses were introduced and the growth rate was measured using impurity striations. The temperature gradient in the solution was estimated from the indium compositional profile of the growth crystal. The appropriate cooling rate was calculated from the growth rate and temperature gradient. The homogeneous InGaSb crystal with aimed composition was grown by the appropriate cooling rate.
収録刊行物
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- 日本結晶成長学会誌
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日本結晶成長学会誌 33 (4), 178-, 2006
日本結晶成長学会
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詳細情報 詳細情報について
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- CRID
- 1390001205896904320
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- NII論文ID
- 110006208446
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- NII書誌ID
- AN00188386
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- ISSN
- 21878366
- 03856275
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- HANDLE
- 10297/2742
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- IRDB
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可