01aD05 H-Si(111)表面上でのペンタセン薄膜結晶の低速電子顕微鏡観察II : ドメイン構造の生成機構(バイオ・有機(1),第36回結晶成長国内会議)

• 西方 督

  東北大金研

• 佐崎 元

  東北大金研:東北大学際セ

• Sadowski J. T.

  東北大金研

• Al-Mahboob A.

  東北大金研

• 藤川 安仁

  東北大金研

• 須藤 彰三

  東北大院理

• 櫻井 利夫

  東北大金研

• 中嶋 一雄

  東北大金研

書誌事項

タイトル別名

• 01aD05 Low energy electron microscopic observation of pentacene thin film crystals on a H-Si(111) surface II : a formation mechanism of domain structures(NCCG-36)

抄録

Dendritic growth of pentacene (Pn) thin film crystals on a H-Si(111) surface was observed in situ by low-energy electron microscopy. We found that each dendrite branch is always composed of three domains with different orientations of 2D unit cells (Fig. 1(a)), and the center domain whose b axes of the 2D unit cell is parallel to the growth direction of the dendrite branch grows faster than outer two domains. This result indicates the direction of the b axis of the Pn 2D unit cell is a preferential growth direction. In addition, since the b axes of the outer two domains are rotated ±60 deg in relation to that of the center domain (Fig. 1(a)), the outer directions of the branch are the preferential growth directions of the outer domains. Hence, when a child branch appears, the outer domain of the mother branch becomes a center domain of the child branch.

収録刊行物

• 日本結晶成長学会誌

  日本結晶成長学会誌 33 (4), 236-, 2006

  日本結晶成長学会

詳細情報

• CRID: 1390001205896862080
• NII論文ID: 110006208504
• NII書誌ID: AN00188386
• DOI: 10.19009/jjacg.33.4_236
• ISSN: 21878366
• ISSN: 03856275
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可