Evidence of the Fine Pseudogap at the Fermi Level in Al-based Quasicrystals

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  • Okada J. T.
    Institute of Industrial Science, The University of Tokyo
  • Ekino T.
    Graduate School of Integrated Arts and Sciences, Hiroshima University Department of Quantum Matter, Graduate School of Advanced Sciences of Matter, Hiroshima University
  • Yokoyama Y.
    Institute for Materials Research, Tohoku University
  • Takasaki T.
    Department of Quantum Matter, Graduate School of Advanced Sciences of Matter, Hiroshima University
  • Watanabe Y.
    Institute of Industrial Science, The University of Tokyo
  • Nanao S.
    Institute of Industrial Science, The University of Tokyo

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抄録

Theoretical studies have predicted that quasicrystals (QCs) have conspicuously fine electronic structures near the Fermi level (EF); the density of states (DOS) consists of sharp peaks and deep valleys with several 10 meV intervals. These fine electronic structures are believed to explain the unusual sensitivity of the electrical conductivity to slight changes in the chemical composition of QCs. We have investigated the DOS around the EF on single grains of icosahedral (i-)AlCuFe, i-AlPdMn, and decagonal (d-)AlCuCo QCs by break-junction tunneling spectroscopy at 4.2 K. Well-defined and reproducible pseudogaps at the EF are observed for these alloys. This is a direct experimental result that confirms the fine electronic structure existing in the vicinity of the EF.

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