半導体パルスパワー電源の現状と今後～プラズマ研究をささえる半導体パワーデバイス～６．高速・大容量半導体パワーデバイス

• 高田 育紀

  三菱電機

書誌事項

タイトル別名

• High-Speed, Large-Current Power Semiconductors for Pulse Power Generation
• 高速・大容量半導体パワーデバイス
• コウソク ダイ ヨウリョウ ハンドウタイ パワーデバイス

抄録

This paper describes the operation principles and limits of power semiconductors. In addition, operation mechanisms of the new pulse power devices, SOS (Semiconductor Opening Switch) and dynistors, are explained qualitatively. The fastest operating power device is the series connection of comparatively low-voltage devices. For large-current operation, a uniformly operating pin-diode structure device is essential. An SOS is constructed from dozens of medium voltage (about 3kV) special hard-recovery diodes. This can shut off 2kA current at 10kV with in 10ns. The dynistor has n⁺pnp⁺ four layers and two electrodes. Serial-connected dynistors have the potential to replace thyratrons. These new devices can endure over 10 kA/cm² at much higher voltage than their static breakdown values in the repetitive use more than 10¹¹ times.

収録刊行物

• プラズマ・核融合学会誌

  プラズマ・核融合学会誌 81 (5), 367-374, 2005

  社団法人 プラズマ・核融合学会

キーワード

• power semiconductor
• pulse power
• pin diode
• dynistor
• FID
• RDS
• SOS
• DSRD
• IRD

詳細情報

• CRID: 1390282681489763968
• NII論文ID: 110006282113
• NII書誌ID: AN10401672
• DOI: 10.1585/jspf.81.367
• BIBCODE: 2005JPFR...81..367T
• COI: 1:CAS:528:DC%2BD2MXmtFGnu7Y%3D
• NDL書誌ID: 7375489
• ISSN: 09187928
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7375489
• Web Site: http://www.jstage.jst.go.jp/article/jspf/81/5/81_5_367/_pdf
• Web Site: http://dl.ndl.go.jp/info:ndljp/pid/10455910
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • NDL-Digital
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可