High Moment FeNiN Films Prepared by Dual Ion Beam Sputtering.

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  • Wang Heying
    Department of Physics, Tsinghua University, Beijing, 100084, P. R. China Key Laboratory for Quantum Information and Measurements, MOE, P. R. China
  • Liu Jun
    Department of Physics, Tsinghua University, Beijing, 100084, P. R. China
  • He Yuan-Jin
    Department of Physics, Tsinghua University, Beijing, 100084, P. R. China Key Laboratory for Quantum Information and Measurements, MOE, P. R. China
  • Mao Weihong
    Department of Physics, Tsinghua University, Beijing, 100084, P. R. China
  • Chen Hong
    Department of Physics, Tsinghua University, Beijing, 100084, P. R. China Key Laboratory for Quantum Information and Measurements, MOE, P. R. China
  • Zhang Huiyun
    Department of Physics, Tsinghua University, Beijing, 100084, P. R. China Key Laboratory for Quantum Information and Measurements, MOE, P. R. China
  • Huang Hesheng
    Department of Physics, Tsinghua University, Beijing, 100084, P. R. China
  • Jiang Enyong
    Department of Applied Physics, Tianjin University, Tianjin, 300072, P. R. China

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抄録

High moment FeNiN films with soft magnetic properties were prepared on glass and Si (100) substrates by a dual ion beam sputtering (DIBS) system. Effects of nitrogen concentrations and substrate temperatures on the phase structure and magnetic properties of FeNiN films were investigated. Nitrogen concentration of the FeNiN film was saturated to 20 at.% as nitrogen partial pressure was higher than 3 × 10-2 Pa. FeNiN films consisted of α-(FeNi), α′′-(Fe,Ni)16N2, γ′-(Fe,Ni)4N phases or a mixture of these phases under different deposition parameters. The magnetic properties depended dramatically on the phase structure. FeNiN films with 8-12 at.% nitrogen concentrations deposited at 140-180°C exhibited α′′-(Fe,Ni)16N2 and γ′-(Fe,Ni)4N phases, high saturation magnetization of 2.2-2.3 T and low coercivity of 80-110 A/m.

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