Ultraviolet Photon Induced Bulk, Surface and Interface Modifications in n-Hg<sub>0.8</sub>Cd<sub>0.2</sub>Te in Hydrogen Environment

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  • Agnihotri O. P.
    Center for Electro-Optics, Department of Electrical Engneering and Computer Science, Korea Advanced Institute of Science and Technology, Daejeon, Korea
  • Pal Ravinder
    Solid State Physics Laboratory, Delhi-110054 India
  • Yang Keedong
    Center for Electro-Optics, Department of Electrical Engneering and Computer Science, Korea Advanced Institute of Science and Technology, Daejeon, Korea
  • Bae Soo-Ho
    Center for Electro-Optics, Department of Electrical Engneering and Computer Science, Korea Advanced Institute of Science and Technology, Daejeon, Korea
  • Lee Sang-Jun
    Center for Electro-Optics, Department of Electrical Engneering and Computer Science, Korea Advanced Institute of Science and Technology, Daejeon, Korea
  • Lee Min-Young
    Center for Electro-Optics, Department of Electrical Engneering and Computer Science, Korea Advanced Institute of Science and Technology, Daejeon, Korea
  • Choi Woo Seok
    Center for Electro-Optics, Department of Electrical Engneering and Computer Science, Korea Advanced Institute of Science and Technology, Daejeon, Korea
  • Choi Jong Hwa
    Center for Electro-Optics, Department of Electrical Engneering and Computer Science, Korea Advanced Institute of Science and Technology, Daejeon, Korea
  • Lee Hee Chul
    Center for Electro-Optics, Department of Electrical Engneering and Computer Science, Korea Advanced Institute of Science and Technology, Daejeon, Korea
  • Kato Isamu
    Department of Electronics, Information and Communication Engineering and Laboratory for Bio-Science and Photonics, Waseda University, Tokyo, Japan

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  • Ultraviolet Photon Induced Bulk, Surface and Interface Modifications in n-Hg0.8Cd0.2Te in Hydrogen Environment.

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Ultraviolet photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te (MCT) and metal insulator semiconductor (MIS) structures fabricated from CdTe/n-Hg0.8Cd0.2Te have been investigated in a hydrogen environment. The shift of the absorption edge towards the short wavelength side and the enhancement of the IR transmission in n-Hg0.8Cd0.2Te are thought to be due to the reduction in the density of gap states due to residual impurities or defects. A pre-CdTe deposition surface treatment prevents the surface inversion of n-MCT during CdTe deposition and MIS devices after UV photon excitation show a considerable lowering of the interface charges. X-ray photoelectron spectroscopy profiles of annealed CdTe/n-Hg0.8Cd0.2Te show evidence of interface grading which accounts for the stability of CdTe passivation.

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