Pseudo-Real Time Observation of the Dynamics of Phase Defect on Si(100) Surface.

DOI Web Site Web Site 被引用文献2件 参考文献15件
  • Yoshida Shoji
    Institute of Applied Physics, CREST, University of Tsukuba, Tsukuba 305-8573, Japan
  • Takeuchi Osamu
    Institute of Applied Physics, CREST, University of Tsukuba, Tsukuba 305-8573, Japan
  • Hata Kenji
    Institute of Applied Physics, CREST, University of Tsukuba, Tsukuba 305-8573, Japan
  • Morita Ryuji
    Department of Applied Physics, CREST, Hokkaido University, Sapporo 060-8628, Japan
  • Yamashita Mikio
    Department of Applied Physics, CREST, Hokkaido University, Sapporo 060-8628, Japan
  • Shigekawa Hidemi
    Institute of Applied Physics, CREST, University of Tsukuba, Tsukuba 305-8573, Japan

この論文をさがす

抄録

The dynamics of a phase defect (P-defect) on the Si(100) surface was studied for the first time by scanning tunneling microscopy in pseudo-real time below 10K, using the repeated-line-scan technique in which single line scans are repeated on the same path along a dimer row. In addition to the pair creation and annihilation of the P-defect, the effect of a step on the motion of the P-defect was clearly demonstrated. Since the local barrier height for the migration of the P-defect depends on the local environment such as strain and electronic structure due to the existence of defects or dopants, the obtained results also indicate that analysis of the P-defect is promising for local probing of the Si(100) surface.

収録刊行物

被引用文献 (2)*注記

もっと見る

参考文献 (15)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ