Preparation of BaTiO<sub>3</sub>–BaZrO<sub>3</sub>Films by Metal-Organic Chemical Vapor Deposition

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  • Tohma Tetsuro
    Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
  • Masumoto Hiroshi
    Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
  • Goto Takashi
    Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

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タイトル別名
  • Preparation of BaTiO3-BaZrO3 Films by Metal-Organic Chemical Vapor Deposition.

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Barium titanate zirconate (Ba(Ti1-xZrx)O3) films in the range of x = 0 to 1.0 were prepared on (100)Pt/(100)MgO substrates at 973 K by metalorganic chemical vapor deposition (MOCVD). The effects of zirconium content (x) on the microstructure and dielectric properties of films were investigated. At x ≤ 0.15, the Ba(Ti1-xZrx)O3 films showed highly crystallized and significant (001) orientation. The (001) orientation of the films decreased with increasing x, and the orientation became random at x > 0.36. The dielectric constant of Ba(Ti1-xZrx)O3 films changed with x from 35 to 689 and showed a maximum at x = 0.15. The remanent polarization (2Pr) and the coercive field (2EC) of Ba(Ti0.85Zr0.15)O3 film were 3 μC·cm-2 and 14 kV·cm-1, respectively. The onset electric field for nonohmic conduction of Ba(Ti1-xZrx)O3 film increased from 10 k to 1 MV·cm-1 with increasing x.

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