Diamond Deposition on a Large-Area Substrate by Plasma-Assisted Chemical Vapor Deposition Using an Antenna-Type Coaxial Microwave Plasma Generator.

  • Taniyama Norikazu
    Micro Denshi Co., Ltd., 2-8-25 Yoshinodai, Kawagoe, Saitama 350-0833, Japan
  • Kudo Minoru
    Micro Denshi Co., Ltd., 2-8-25 Yoshinodai, Kawagoe, Saitama 350-0833, Japan
  • Matsumoto Osamu
    Department of Chemistry, Aoyama Gakuin University, Chitosedai, Setagaya-ku, Tokyo 157-8572, Japan
  • Kawarada Hiroshi
    Department of Electronics, Information and Communication Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169-0072, Japan

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Diamond deposition on a large area silicon wafer substrate (φ 100 mm) is achieved with a methane/hydrogen plasma induced by an antenna-type coaxial microwave plasma generator. Deposition of diamond is observed over the entire substrate. Diamond precursors are emitted radially onto a silicon substrate from the plasma sphere generated at the tip of the antenna. The possibility of diamond deposition outside the plasma sphere is discussed using a semi-empirical equation.

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