Diamond Deposition on a Large-Area Substrate by Plasma-Assisted Chemical Vapor Deposition Using an Antenna-Type Coaxial Microwave Plasma Generator.
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- Taniyama Norikazu
- Micro Denshi Co., Ltd., 2-8-25 Yoshinodai, Kawagoe, Saitama 350-0833, Japan
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- Kudo Minoru
- Micro Denshi Co., Ltd., 2-8-25 Yoshinodai, Kawagoe, Saitama 350-0833, Japan
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- Matsumoto Osamu
- Department of Chemistry, Aoyama Gakuin University, Chitosedai, Setagaya-ku, Tokyo 157-8572, Japan
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- Kawarada Hiroshi
- Department of Electronics, Information and Communication Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169-0072, Japan
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抄録
Diamond deposition on a large area silicon wafer substrate (φ 100 mm) is achieved with a methane/hydrogen plasma induced by an antenna-type coaxial microwave plasma generator. Deposition of diamond is observed over the entire substrate. Diamond precursors are emitted radially onto a silicon substrate from the plasma sphere generated at the tip of the antenna. The possibility of diamond deposition outside the plasma sphere is discussed using a semi-empirical equation.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 40 (7A), L698-L700, 2001
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681230836992
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- NII論文ID
- 110006350501
- 210000050791
- 130004528757
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- NII書誌ID
- AA10650595
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/13474065
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- NDL書誌ID
- 5825069
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可