Conductance Switching Phenomena and H-Like Aggregates in Squalylium-Dye Langmuir-Blodgett Films

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  • Kushida Masahito
    Department of Materials Technology, Faculty of Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
  • Inomata Hisao
    Department of Materials Technology, Faculty of Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
  • Tanaka Yuichiro
    Department of Materials Technology, Faculty of Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
  • Harada Kieko
    Department of Materials Technology, Faculty of Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
  • Saito Kyoichi
    Department of Materials Technology, Faculty of Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
  • Sugita Kazuyuki
    Department of Materials Technology, Faculty of Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan

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  • Conductance Switching Phenomena and H-Like Aggregates in Squarylium-Dye Langmuir-Blodgett Films.

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The current-voltage characteristics of sandwich devices with the structure of top gold electrode/squarylium-dye Langmuir-Blodgett (SQ LB) films/bottom aluminum electrode indicated four kinds of conductivity depending on the evaporation conditions of the top gold electrode. The current densities of two, which showed conductance switching, of the four samples were 30-40 μA/cm2 and 20-30 mA/cm2 in the ON state. In the former case, the dependence of conductance switching voltage on the number of SQ LB films and ultraviolet-visible absorption spectra were studied. The results revealed that conductance switching phenomena were induced at the interface between the top gold electrode and SQ LB films, and caused by the presence of H-like aggregates in SQ LB films.

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