Room Temperature Micro Adhesional Bonding
-
- TAKAHASHI Y.
- JWRI, Osaka University
-
- UESUGI Katsuhiro
- Osaka University (Present office)Mitsubishi Electric Corp., Semiconductor Group ULSI Development Center
-
- MATSUSAKA Souta
- Chiba University
この論文をさがす
抄録
The room temperature adhesional bonding of fine Au wires was investigated. Au wires with a diameter of 100μm were contacted to Au plates and Si substrates after the surfaces had been activated by Ar ion irradiation. It was found that the experimental contact width, 2a, was nearly equal to the theoretical adhesional elastic contact width, 2aj, when f was small enough (f<500N/m) but the contact 2a gradually became greater than 2aj if f increased (f>500N/m), and became nearly equal to the elasto-plastic contact width a_ep. It was also found that the experimental bond strength increased with increasing the holding time after bonding (contacting). It was suggested from the experimental results (T/t_r-1/T plots) that the mechanism of increasing bond strength is due to the stress induced diffusion along the bond interface, where t_r is the time taken to obtain a constant increase in the bond-strength and T is the absolute temperature. Further, the possibility of nano contact joining was suggested.
収録刊行物
-
- Trans. JWRI
-
Trans. JWRI 32 59-62, 2003
大阪大学
- Tweet
キーワード
詳細情報 詳細情報について
-
- CRID
- 1570291227349484928
-
- NII論文ID
- 110006486178
-
- NII書誌ID
- AA00867058
-
- ISSN
- 03874508
-
- 本文言語コード
- en
-
- データソース種別
-
- CiNii Articles