抄録
β-SiA10N: Eu^<2+> oxynitride green phosphors with compositions of Eu_xSi_6-_zAl_zO_zN_<8-z>(x = 0.0065 -0.0390, z = 0.231) were successfully prepared using GPS (gas pressured sintering) method. The phase purity, micro structure, luminescent and thermal quenching properties for the prepared β-SiAlON:Eu^<2+> phosphors were investigated in detail. The prepared β-SiAl0N:Eu^<2+> phosphor samples with Eu^<2+> doping concentration of x < 0.0238 showed pure single βSiAl0N phase. The prepared β-SiAlON:Eu^<2+> phosphors absorbed UV-visible spectral region, and showed a single intense broadband emission in a range from 525 to 540 nm. The effects of the Eu^<2+> doping concentration on the optical properties for the β-SiAlON: Eu^<2+> phosphors were discussed under consideration of concentration quenching. The temperature dependence of photoluminescence (PL) properties was investigated from 25 to 300℃, and the activation energies (ΔE) for thermal quenching of the prepared β-SiAlON:Eu^<2+> phosphors were determined by Arrhenius fitting. The experimental results clearly indicates that the prepared β-SiAlON:Eu^<2+> has great potentials as a down-conversion green phosphor for white light emitting diodes (LEDs) utilizing near UV or blue LEDs as the primary light source.
