High Power and High Efficiency Semipolar InGaN Light Emitting Diodes

DOI NDLデジタルコレクション Web Site 被引用文献7件 参考文献42件
  • SATO Hitoshi
    Materials Department and Electrical Engineering Department University of California, Santa Barbara
  • HIRASAWA Hirohiko
    Materials Department and Electrical Engineering Department University of California, Santa Barbara
  • ASAMIZU Hirokuni
    Materials Department and Electrical Engineering Department University of California, Santa Barbara
  • FELLOWS Natalie
    Materials Department and Electrical Engineering Department University of California, Santa Barbara
  • TYAGI Anurag
    Materials Department and Electrical Engineering Department University of California, Santa Barbara
  • SAITO Makoto
    Materials Department and Electrical Engineering Department University of California, Santa Barbara
  • FUJITO Kenji
    Optoelectronics Laboratory, Mitsubishi Chemical Corporation
  • SPECK James S.
    Materials Department and Electrical Engineering Department University of California, Santa Barbara
  • DENBAARS Steven P.
    Materials Department and Electrical Engineering Department University of California, Santa Barbara
  • NAKAMURA Shuji
    Materials Department and Electrical Engineering Department University of California, Santa Barbara

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We demonstrate high power blue and green InGaN/GaN multiple-quantum-well (MQW) light emitting diodes (LEDs) grown on low extended defect density semipolar (10 1 1) and (11 2 2) bulk GaN substrates by metal organic chemical vapor deposition. The output power and external quantum efficiency (EQE) at 20 mA under pulsed operation (10 % duty cycle) were 19.7 mW and 34.4 % for the blue LED and 9.0 mW and 18.9 % for the green LED, respectively. The blue LED showed <1 nm red-shift with change in drive current from 1 - 200 mA, indicating a significant reduction of polarization related internal electric fields.

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