Direct Growth of [100]-Oriented High-Quality β-FeSi2 Films on Si(001) Substrates by Molecular Beam Epitaxy

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  • Hiroi Noriyoshi
    Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
  • Suemasu Takashi
    Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
  • Takakura Ken'ichiro
    Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
  • Seki Naoki
    Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
  • Hasegawa Fumio
    Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan

書誌事項

タイトル別名
  • Direct Growth of[100]-Oriented High-Quality .BETA.-FeSi2 Films on Si(001) Substrates by Molecular Beam Epitaxy.
  • Direct Growth of 100 Oriented High Quality ベータ FeSi2 Films on Si 001 Substrates by Molecular Beam Epitaxy
  • Direct Growth of [100]-Oriented High-Quality β-FeSi<sub>2</sub> Films on Si(001) Substrates by Molecular Beam Epitaxy

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抄録

We have directly grown [100]-oriented high-quality β-FeSi2 films on Si(001) substrates with a β-FeSi2 template by molecular beam epitaxy(MBE) at 470°C. It was found that the crystalline quality of the as-grown β-FeSi2 film was as good as that of the film grown by the multilayer method as far as X-ray diffraction intensity was concerned. However, the electrical property of the as-grown β-FeSi2 film was very poor. The crystalline quality and the electrical property were much more quickly improved by 900°C annealing compared to the films grown by the multilayer technique. The [100] orientation of MBE-grown β-FeSi2 film was preserved even for a 1-μm-thick film.

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