Electric-field-induced giant strain in Bi0.5Na0.5TiO3-based single crystals: Influence of high-oxygen-pressure annealing

• NOGUCHI Yuji

  Research Center for Advanced Science and Technology, The University of Tokyo

• TERANISHI Shunsuke

  Research Center for Advanced Science and Technology, The University of Tokyo

• SUZUKI Muneyasu

  Research Center for Advanced Science and Technology, The University of Tokyo

• MIYAYAMA Masaru

  Research Center for Advanced Science and Technology, The University of Tokyo

抄録

Influences of high-oxygen-pressure (350 MPa) annealing on the properties of leakage current, polarization, and strain were investigated for single crystals of (Bi_0.5Na_0.5)TiO₃-(Bi_0.5K_0.5)TiO₃-BaTiO₃ with P4mm tetragonal structure The oxygen annealing led to a marked increase in leakage current, showing that the oxidized crystals have a high concentration of electron hole (carrier) and a low concentration of oxygen vacancy compared with the crystals annealed in air. While the air-annealed crystals exhibited a giant strain up to 0.8% at an electric field of 40 kV/cm, the oxidized crystals showed a small strain less than 0.3%. The results can be explained by the interaction between ferroelectric domains and charged defects.

収録刊行物

• Journal of the Ceramic Society of Japan

  Journal of the Ceramic Society of Japan 117 (1361), 32-36, 2009

  公益社団法人 日本セラミックス協会

キーワード

• Ferroelectric
• Piezoelectric
• Perovskite
• Defect
• BNT
• Single crystal

詳細情報

• CRID: 1390001205283930624
• NII論文ID: 110007026735
• NII書誌ID: AA12229489
• DOI: 10.2109/jcersj2.117.32
• COI: 1:CAS:528:DC%2BD1MXps12jtg%3D%3D
• ISSN: 13486535
• ISSN: 18820743
• NDL書誌ID: 9751601
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I9751601
• Web Site: http://www.jstage.jst.go.jp/article/jcersj2/117/1361/117_1361_32/_pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可