抄録
We have developed monolithic SOI type 1200V level shifter for inverter driver IC based on new design concept of cascaded 120V LDMOSFETs. In order to clarify the problem of blocking voltage lowering against high dV/dt surge, we have analyzed transient behavior of monolithically cascaded LDMOSFETs by numerical simulations and experiments. As the results, we have established new design concept including device layout and circuit, which minimizes breakdown voltage at very high dV/dt of 20kV/μs. The concept is expected as the key technology enabling 1200V SOI 1-chip inverter driver IC for hard applications such as automotive electronics.
