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Abstract
Our research has shown that dynamic avalanche phenomenon is related to the hole trap level that is induced at an energy level of Ev+0.35eV. In this study we will describe how we used the DLTS (Deep Level Transient Spectroscopy) method and CL (Cathodo Luminescence) method to identify that the defects which form the hole trap level are in fact CiOi that is present in the Si wafer. By controlling amounts of CiOi in the Si wafer, we were able to improve the diode characteristics and suppress oscillation of the IGBT module current and voltage waveforms.
Journal
- IEICE technical report. Electron devices [List of Volumes]
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IEICE technical report. Electron devices 108(262), 1-5, 2008-10-16 [Table of Contents]
The Institute of Electronics, Information and Communication Engineers
