反応性スパッタ法によるCuInS_2薄膜の作製と評価(薄膜プロセス・材料,一般)  [in Japanese] Preparation and Characterization of CuInS_2 Films by Reactive Sputtering Method  [in Japanese]

    • 坪井 望 TSUBOI Nozomu
    • 新潟大学大学院自然科学研究科:新潟大学工学部:新潟大学超域研究機構 Graduate School of Science and Technology, Niigata University:Faculty of Engineering, Niigata University:Center for Transdisciplinary Research, Niigata University
    • 金子 双男 KANEKO Futao
    • 新潟大学大学院自然科学研究科:新潟大学工学部:新潟大学超域研究機構 Graduate School of Science and Technology, Niigata University:Faculty of Engineering, Niigata University:Center for Transdisciplinary Research, Niigata University

Abstract

Cu及びInターゲット前での基板停止時間を原子層オーダー程度で制御し,反応性ガスCS_2雰囲気中で各金属ターゲットを交互スパッタすることにより,[Cu]/[In]比の異なる薄膜を作製した.薄膜の組成は,高CS_2ガス分圧では(Cu_2S,Cu_<1.96>S)-(CuInS_2)-(CuIn_5S_8)-(In_2S_3)擬固溶体系に,低CS_2ガス分圧では(Cu_2S,Cu_<1.96>S)-(CuInS_2)-(InS,In_5S_4)擬固溶体系に対応して変化した.CuInS_2の化学量論組成に対応した薄膜はp形で,CuInS_2,以外のX線回折ピークは観測されず,その基礎吸収端はCuInS_2の禁制帯幅に対応していた.

CuInS_2 films with various [Cu]/[In] ratios were deposited on soda lime glass substrates at 450℃ by sputtering alternatively Cu and In targets under Ar-diluted CS_2 (CS_2: 2-5mTorr) atmosphere. Composition of the films deposited under high and low CS_2 pressures corresponded to the (Cu_2S, Cu_<1.96>S)-(CuInS_2)-(CuIn_5S_8)-(In_2S_3) system line and the (Cu_2S, Cu_<1.96>S)-(CuInS_2)-(InS, In_5S_4) system line, respectively. The smooth surface films with the stoichiometric composition of CuInS_2 exhibited the CuInS_2 XRD lines only, and had the absorption edge corresponding to the energy gap of CuInS_2 and p-type conductivity.

Journal

IEICE technical report. Component parts and materials   [List of Volumes]

IEICE technical report. Component parts and materials 108(269), 1-5, 2008-10-23  [Table of Contents]

The Institute of Electronics, Information and Communication Engineers

References:  5

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Codes

  • NII Article ID (NAID) :
    110007081679
  • NII NACSIS-CAT ID (NCID) :
    AN10012932
  • Text Lang :
    JPN
  • Article Type :
    ART
  • ISSN :
    09135685
  • NDL Article ID :
    9703874
  • NDL Source Classification :
    ZN33(科学技術--電気工学・電気機械工業--電子工学・電気通信)
  • NDL Call No. :
    Z16-940
  • Databases :
    CJP  NDL  NII-ELS 

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