マイクロ波発生用高光電流InGaAs pin PD(超高速伝送・変復調・分散補償技術,超高速光信号処理技術,広帯域光増幅・WDM技術、受光デバイス,高光出力伝送技術,一般,(ECOC報告))  [in Japanese] High current InGaAs pin PD for microwave application  [in Japanese]

    • 綿谷 力 WATATANI Chikara
    • 三菱電機(株)高周波光デバイス製作所 Mitsubishi Electric Corporation High Frequency & Optical Device Works
    • 太田 徹 OTA Toru
    • 三菱電機(株)高周波光デバイス製作所 Mitsubishi Electric Corporation High Frequency & Optical Device Works

Abstract

マイクロ波高出力用として、放熱性改善と低容量化のためにpn接合を半絶縁性InPで埋込み、空間電荷効果抑制のために吸収層厚の一部をp型化したInGaAs pin-PDを開発した。1.55um波長の10GHz正弦波変調光入射時の最大マイクロ波出力は115mWが得られた。最大出力は,主に空間電荷効果で発生する抵抗成分で制限されると推定している。

For microwave applications, we have developed an InGaAs pin PD. Its absorbing layer is buried by a semi-insulated InP layer to reduce the capacitance and thermal resistance. The InGaAs absorbing layer is partially doped by p-type dopant to reduce the space-charge-effect. The maximum output power of 115mW is obtained at 10GHz for the 1.55um wavelength. This value is probably limited by the resistance originated from the space-charge effect.

Journal

Technical report of IEICE. OPE   [List of Volumes]

Technical report of IEICE. OPE 108(260), 7-10, 2008-10-16  [Table of Contents]

The Institute of Electronics, Information and Communication Engineers

References:  4

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Codes

  • NII Article ID (NAID) :
    110007100740
  • NII NACSIS-CAT ID (NCID) :
    AN10442691
  • Text Lang :
    JPN
  • Article Type :
    ART
  • ISSN :
    09135685
  • NDL Article ID :
    9703684
  • NDL Source Classification :
    ZN33(科学技術--電気工学・電気機械工業--電子工学・電気通信)
  • NDL Call No. :
    Z16-940
  • Databases :
    CJP  NDL  NII-ELS