Temperature Dependent f-Electron Valence of Ion in Two-Level Kondo System(Condensed matter: electronic structure and electrical, magnetic, and optical properties)

    • TANIKAWA Shinya
    • Division of Materials Physics, Department of Materials Engineering Science, Graduate School of Engineering Science, Osaka University
    • MATSUURA Hiroyasu
    • Division of Materials Physics, Department of Materials Engineering Science, Graduate School of Engineering Science, Osaka University
    • MIYAKE Kazumasa
    • Division of Materials Physics, Department of Materials Engineering Science, Graduate School of Engineering Science, Osaka University

Abstract

Theory for temperature dependent valence of Sm ion in magnetically robust heavy fermion system SmOs_4Sb_<12> is presented on the basis of the two-level (or double-well) Kondo model. It is shown that the conduction electrons with f-symmetry accumulate on the ion tunneling between double well potential when the temperature is decreased across the Kondo temperature.

Journal

Journal of the Physical Society of Japan   [List of Volumes]

Journal of the Physical Society of Japan 78(3), "034707-1"-"034707-5", 2009-03-15  [Table of Contents]

The Physical Society of Japan (JPS)

References:  20

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Codes

  • NII Article ID (NAID) :
    110007138868
  • NII NACSIS-CAT ID (NCID) :
    AA00704814
  • Text Lang :
    ENG
  • Article Type :
    ART
  • ISSN :
    00319015
  • NDL Article ID :
    10183185
  • NDL Source Classification :
    ZM35(科学技術--物理学)
  • NDL Call No. :
    Z53-A404
  • Databases :
    CJP  NDL  NII-ELS 

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