Temperature Dependent f-Electron Valence of Ion in Two-Level Kondo System(Condensed matter: electronic structure and electrical, magnetic, and optical properties)

    • TANIKAWA Shinya
    • Division of Materials Physics, Department of Materials Engineering Science, Graduate School of Engineering Science, Osaka University
    • MATSUURA Hiroyasu
    • Division of Materials Physics, Department of Materials Engineering Science, Graduate School of Engineering Science, Osaka University
    • MIYAKE Kazumasa
    • Division of Materials Physics, Department of Materials Engineering Science, Graduate School of Engineering Science, Osaka University

抄録

Theory for temperature dependent valence of Sm ion in magnetically robust heavy fermion system SmOs_4Sb_<12> is presented on the basis of the two-level (or double-well) Kondo model. It is shown that the conduction electrons with f-symmetry accumulate on the ion tunneling between double well potential when the temperature is decreased across the Kondo temperature.

収録刊行物

Journal of the Physical Society of Japan   [巻号一覧]

Journal of the Physical Society of Japan 78(3), "034707-1"-"034707-5", 2009-03-15  [この号の目次]

社団法人日本物理学会

参考文献:  20件

参考文献を見るにはログインが必要です。ユーザIDをお持ちでない方は新規登録してください。

プレビュー

プレビュー

各種コード

  • NII論文ID(NAID) :
    110007138868
  • NII書誌ID(NCID) :
    AA00704814
  • 本文言語コード :
    ENG
  • 資料種別 :
    ART
  • ISSN :
    00319015
  • NDL 記事登録ID :
    10183185
  • NDL 雑誌分類 :
    ZM35(科学技術--物理学)
  • NDL 請求記号 :
    Z53-A404
  • 収録DB :
    CJP書誌  NDL  NII-ELS  JSAP/JPS