p型Si薄膜の結晶化と電気特性(薄膜(Si,化合物,有機,フレキシブル)機能デバイス・材料・評価技術及び一般)  [in Japanese] Crystallization and annealing of heavily doped p-type Si film and electronic properties  [in Japanese]

Abstract

As a result of excimer laser annealing (ELA) for heavily boron doped Si film, the sheet resistance decreased with improving the crystallinity. Si film of 50nm thickness with extremely low sheet resistance below 50ohm/□ was obtained. Effective electrical activation in the Si film is comparable to the reported result for bulk single-crystalline Si under thermal equilibrium condition. ELA activation is effective to electrodes in CMOS TFTs with pin sensor-diodes and for thin-film solar cell as a new System on Panel (SoP).

Journal

Technical report of IEICE. SDM   [List of Volumes]

Technical report of IEICE. SDM 109(19), 25-28, 2009-04-17  [Table of Contents]

The Institute of Electronics, Information and Communication Engineers

References:  10

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Codes

  • NII Article ID (NAID) :
    110007227255
  • NII NACSIS-CAT ID (NCID) :
    AN10013254
  • Text Lang :
    JPN
  • Article Type :
    ART
  • ISSN :
    09135685
  • NDL Article ID :
    10220915
  • NDL Source Classification :
    ZN33(科学技術--電気工学・電気機械工業--電子工学・電気通信)
  • NDL Call No. :
    Z16-940
  • Databases :
    CJP  NDL  NII-ELS 

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