抄録
As a result of excimer laser annealing (ELA) for heavily boron doped Si film, the sheet resistance decreased with improving the crystallinity. Si film of 50nm thickness with extremely low sheet resistance below 50ohm/□ was obtained. Effective electrical activation in the Si film is comparable to the reported result for bulk single-crystalline Si under thermal equilibrium condition. ELA activation is effective to electrodes in CMOS TFTs with pin sensor-diodes and for thin-film solar cell as a new System on Panel (SoP).
