25aA06 InGaSb均一組成結晶成長のための成長速度測定(バルク,第34回結晶成長国内会議)

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  • 25aA06 Measurement of growth rate for growth of InGaSb crystal with uniform composition(NCCG-34)

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To grow InGaSb bulk crystals with uniform composition, the relationship between the composition and growth rate were measured. The samples was GaSb(seed)/InSb/GaSb(feed) sandwich structure and Te impurity was doped in the InSb. Thermal pulses were introduced during growth to form the Te striations. Experimental results indicated that lack of GaSb(feed) caused the decrease of growth rate and the increase of In composition. By adjusting the cooling rate, In_<0.03>Ga_<0.97>Sb homogeneous crystal were grown.

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