書誌事項
- タイトル別名
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- 25aA06 Measurement of growth rate for growth of InGaSb crystal with uniform composition(NCCG-34)
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To grow InGaSb bulk crystals with uniform composition, the relationship between the composition and growth rate were measured. The samples was GaSb(seed)/InSb/GaSb(feed) sandwich structure and Te impurity was doped in the InSb. Thermal pulses were introduced during growth to form the Te striations. Experimental results indicated that lack of GaSb(feed) caused the decrease of growth rate and the increase of In composition. By adjusting the cooling rate, In_<0.03>Ga_<0.97>Sb homogeneous crystal were grown.
収録刊行物
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- 日本結晶成長学会誌
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日本結晶成長学会誌 31 (3), 108-, 2004
日本結晶成長学会
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詳細情報
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- CRID
- 1390001205897891712
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- NII論文ID
- 110007327561
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- NII書誌ID
- AN00188386
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- ISSN
- 21878366
- 03856275
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- Web Site
- http://hdl.handle.net/10297/2809
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- IRDB
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可