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Abstract
Cu(111)単結晶下地層上においてエピタキシャルSmCo_5(0001)薄膜が得られた.一方,Ru(0001)およびCo(0001)単結晶下地層上ではアモルファスSm-Co相が形成された.Cu下地層上に直接形成されたエピタキシャルSmCo_5薄膜は膜面垂直方向に互いに30度回転した方位関係を持つ双結晶から構成された.Cu下地層上にシード層を設けることにより,SmCo_5結晶の核生成が制御され,SmCo_5(0001)単結晶薄膜が形成された.いずれのエピタキシャルSmCo_5薄膜においても,下地層のCu原子がSmCo_5層に拡散し,Cu原子がSmCo_5規則構造のCoサイトに置換したSm(Co,Cu)_5相が形成された.Cu原子の拡散はエピタキシャルSmCo_5(0001)薄膜の形成に重要な役割を果たしているものと解釈された.
SmCo_5(0001) epitaxial thin films are obtained on Al_2O_3(0001) single-crystal substrates employing Cu(111) single-crystal underlayers, whereas Sm-Co amorphous phase grows on Ru(0001) and Co(0001) underlayers. The SmCo_5 epitaxial layer formed directly on Cu underlayer consists of two types of domains whose orientations are rotated around the film normal by 30 degrees each other. By introducing a thin seed layer on the Cu underlayer, an SmCo_5(0001) single-crystal film is successfully prepared. Cu atoms diffused from the underlayer substitute a part of the Co sites in the SmCo_5 structure, and an alloy compound of Sm(Co,Cu)_5 phase is formed. The Cu atom diffusion plays an important role in assisting the formation of SmCo_5(0001) epitaxial thin film.
Journal
- ITE Technical Report [List of Volumes]
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ITE Technical Report 32(41), 7-12, 2008-10-09 [Table of Contents]
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