F-4 電子線超音波顕微鏡によるn・p・n Si-Trのベース領域の転位線(超音波顕微鏡・非破壊検査)  [in Japanese] F-4 Dislocation lines in the base region of n・p・n Si-Transistor by electron-acoustic microscopy  [in Japanese]

Journal

Symposium on ultrasonic electronics   [List of Volumes]

Symposium on ultrasonic electronics (6), 139-140, 1985-12-10  [Table of Contents]

Steering committee of symposium on ultrasonic electronics

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Codes

  • NII Article ID (NAID) :
    110007459960
  • NII NACSIS-CAT ID (NCID) :
    AN10578660
  • Text Lang :
    JPN
  • Databases :
    NII-ELS