PA11 Comparison of annealing property in photoacoustic signal intensity of Si^+ implanted InP by microphone and piezoelectric transducer methods

PA11 マイクロフォン法と圧電素子法によるSi^+イオン注入したInPの光音響信号強度のアニーリング特性の比較(ポスターセッション2) [in Japanese] PA11 Comparison of annealing property in photoacoustic signal intensity of Si^+ implanted InP by microphone and piezoelectric transducer methods [in Japanese]

- 桑畑周司 Kuwahata Hiroshi
- 東海大・工 Faculty of Engineering, Tokai University
- 武藤信男 Muto Nobuo
- 東海大・工 Faculty of Engineering, Tokai University
- 松森徳衛 Matsumori Tokue
- 東海大・工 Faculty of Engineering, Tokai University
- 上原富美哉 Uehara Fumiya
- 東海大・教養 Faculty of Humanities and Culture, Tokai University

Symposium on ultrasonic electronics [List of Volumes]

Symposium on ultrasonic electronics (18), 139-140, 1997-11-12 [Table of Contents]

Steering committee of symposium on ultrasonic electronics