1-B-2 断続電子線励起によるSi Tr-Chipの接合からの超音波信号の発生位置(B.音波物性)  [in Japanese] 1-B-2 Site of Ultrasonic Signal Generation from a junction of Si Tr-Chip by Irradiation of Chopped Electron Beam under Bias Application  [in Japanese]

Journal

Symposium on ultrasonic electronics   [List of Volumes]

Symposium on ultrasonic electronics (10), 13-14, 1989-11-07  [Table of Contents]

Steering committee of symposium on ultrasonic electronics

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Codes

  • NII Article ID (NAID) :
    110007463861
  • NII NACSIS-CAT ID (NCID) :
    AN10578660
  • Text Lang :
    JPN
  • Databases :
    NII-ELS