1-PB-5 低温高圧下におけるa-SiO_2の超音波測定(1-P.ポスターセッション(概要講演)) [in Japanese] 1-PB-5 Ultrasonic Measurement in a-SiO_2 under Low Temperature and High Pressure Conditions [in Japanese]

- 木暮嘉明 Kogure Y.
- 東工大理 Tokyo Institute of Technology
- 大塚浩平 Ohtsuka K.
- 東工大極エネセ Tokyo Institute of Technology
- 井上泰一 Inoue T.
- 東工大極エネセ Tokyo Institute of Technology
- 大塚美枝子 Ohtsuka M.
- 東工大極エネセ Tokyo Institute of Technology
- 比企能夫 Hiki Y.
- 東工大理 Tokyo Institute of Technology
- 毛利信男 Mori N.
- 東大物性研 University of Tokyo

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Symposium on ultrasonic electronics [List of Volumes]

Symposium on ultrasonic electronics (10), 57-58, 1989-11-07 [Table of Contents]

Steering committee of symposium on ultrasonic electronics

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NII Article ID (NAID) :
110007463880
NII NACSIS-CAT ID (NCID) :
AN10578660
Text Lang :
JPN
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