P2-22 Investigation of deep levels in n-type Si by means of a temperature dependence of piezoelectric photo-thermal signal

P2-22 圧電素子光熱信号の温度依存性によるn型Si中の深い準位の評価(ポスターセッション2,ポスター発表) [in Japanese] P2-22 Investigation of deep levels in n-type Si by means of a temperature dependence of piezoelectric photo-thermal signal [in Japanese]

- 佐藤庄一郎 Sato Shoichiro
- 宮崎大・工 Dept. of Electrical and Electronic, Miyazaki Univ.
- 伊藤敦史 Ito Atsushi
- 宮崎大・工 Dept. of Electrical and Electronic, Miyazaki Univ.
- 福山敦彦 Fukuyama Atsuhiko
- 宮崎大・工 Dept. of Applied Physics Engineering, Miyazaki Univ.
- 碇哲雄 Ikari Tetsuo
- 宮崎大・工 Dept. of Electrical and Electronic, Miyazaki Univ.
- 田中秀司 Tanaka Syuzi
- 福工大・工 Dept. of Electronic Engineering, Fukuoka Institute of Technology

Symposium on ultrasonic electronics [List of Volumes]

Symposium on ultrasonic electronics (22), 215-216, 2001-11-07 [Table of Contents]

Steering committee of symposium on ultrasonic electronics