P1-31 圧電素子光熱分光法とフォトルミネッセンス法による4H-SiC単結晶中の欠陥評価(ポスターセッション1,ポスター発表)  [in Japanese] P1-31 The evaluation of defects in 4H-SiC single crystal by means of Piezoelectric Photo-thermal spectroscopy and Photoluminecsence  [in Japanese]

Journal

Symposium on ultrasonic electronics   [List of Volumes]

Symposium on ultrasonic electronics (23), 69-70, 2002-11-07  [Table of Contents]

Steering committee of symposium on ultrasonic electronics

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Codes

  • NII Article ID (NAID) :
    110007464392
  • NII NACSIS-CAT ID (NCID) :
    AN10578660
  • Text Lang :
    JPN
  • Databases :
    NII-ELS