A Non-snapback NMOS ESD Clamp Circuit using Gate-Coupled Scheme with Isolated Well in a Bipolar-CMOS-DMOS Process(Session 7B : Si IC and Circuit Technology)

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Author(s)

Abstract

A novel non-snapback NMOS Electrostatic Discharge (ESD) clamp circuit is proposed in a 0.35 μm Bipolar-CMOS-DMOS (BCD) process. The proposed ESD clamp has a non-snapback characteristics using gate-coupled effect. This proposed ESD clamp circuit is developed without additional components due to replace a capacitor with an isolated parasitic capacitor. This proposed ESD clamp circuit consists of NMOS transistors with a Slicide blocking layer and a Poly resistor. The result of the proposed ESD clamp circuit is measured by 100 ns Transmission Line Pulse (TLP) system. From the measurement, it was observed that the proposed ESD clamp has approximately 50% lower triggering voltage compared to the conventional gate-grounded NMOS ESD clamp without degradation of the other ESD design key parameter.

Journal

  • Technical report of IEICE. SDM   [List of Volumes]

    Technical report of IEICE. SDM 110(110), 269-274, 2010-06-23  [Table of Contents]

    The Institute of Electronics, Information and Communication Engineers

References:  13

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Codes

  • NII Article ID (NAID)
    110007890323
  • NII NACSIS-CAT ID (NCID)
    AN10013254
  • Text Lang
    ENG
  • Article Type
    ART
  • ISSN
    09135685
  • NDL Article ID
    10753396
  • NDL Source Classification
    ZN33(科学技術--電気工学・電気機械工業--電子工学・電気通信)
  • NDL Call No.
    Z16-940
  • Data Source
    CJP  NDL  NII-ELS 
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