RFスパッタ法により作成したIrSnO2薄膜の基板温度依存性  [in Japanese] Effects of Substrate Temperature of IrSnO2 Films Prepared by R. F. Sputtering  [in Japanese]

IrSnOx thin film has been respected as electrochromic. We studied physical property of IrSnOx thin films were deposited onto glass substrate by reactive R.F. sputtering using 2 kinds of SnO2 and Ir targets. Substrate temperature was ranging from room-temperature to 200 ℃. X-ray diffraction pattern indicated crystallization at 100 ℃, and identified IrSnO2 thin films as tetragonal rutile type structure. It was assumed that the changing valence of IrOx could be enhanced to a transmittance and electrical resistivity.

IrSnOx thin film has been respected as electrochromic. We studied physical property of IrSnOx thin films were deposited onto glass substrate by reactive R.F. sputtering using 2 kinds of SnO2 and Ir targets. Substrate temperature was ranging from room-temperature to 200 ℃. X-ray diffraction pattern indicated crystallization at 100 ℃, and identified IrSnO2 thin films as tetragonal rutile type structure. It was assumed that the changing valence of IrOx could be enhanced to a transmittance and electrical resistivity.