カルコパイライト型半導体AgGaSe2結晶の禁制帯幅の温度依存性  [in Japanese] Temperature Dependence of Bandgap Energy of AgGaSe2 Crystals  [in Japanese]

AgGaSe2 crystals were grown by Hot-Press method at 400～700℃ under 25 MPa for 1 hour. We measured temperature dependent X-ray diffraction (XRD) and photoluminescence (PL) of AgGaSe2 crystal provided at 700℃. Using each lattice constants calculated by XRD, it was found that a liner thermal expansion decreased for T<70 K. Due to band gap energy Eg increased for T<70 K, the Eg coefficient dEg/dT showed positive behavior. In the PL spectra, free exciton peaks showed to increase for T<70 K as well as the liner thermal expansion.

AgGaSe2 crystals were grown by Hot-Press method at 400〜700℃ under 25 MPa for 1 hour. We measured temperature dependent X-ray diffraction (XRD) and photoluminescence (PL) of AgGaSe2 crystal provided at 700℃. Using each lattice constants calculated by XRD, it was found that a liner thermal expansion decreased for T<70 K. Due to band gap energy Eg increased for T<70 K, the Eg coefficient dEg/dT showed positive behavior. In the PL spectra, free exciton peaks showed to increase for T<70 K as well as the liner thermal expansion.