Theoretical Analysis for the Composition of GaAsN Grown by Vapor Phase Epitaxy(<Special Topic>How Do We Model Crystal Growth Phenomena?)

DOI Web Site 24 References
  • Kawano Jun
    Research Institute for Applied Physics, Kyushu University
  • Kangawa Yoshihiro
    Research Institute for Applied Physics, Kyushu University:Department of Aeronautics and Astronautics, Kyushu University
  • Yayama Tomoe
    Department of Aeronautics and Astronautics, Kyushu University
  • Ito Tomonori
    Department of Physics Engineering, Mie University
  • Kakimoto Koichi
    Research Institute for Applied Physics, Kyushu University:Department of Aeronautics and Astronautics, Kyushu University
  • Koukitu Akinori
    Department of Applied Chemistry, Tokyo University of Agriculture and Technology

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Other Title
  • GaAsN気相エピタキシーにおける混晶組成の理論的検討(<特集>どのように結晶成長現象をモデル化するか?)
  • GaAsN気相エピタキシーにおける混晶組成の理論的検討
  • GaAsN キソウ エピタキシー ニ オケル コンショウソセイ ノ リロンテキ ケントウ

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Abstract

Theoretical analysis for the epitaxial growth of GaAs_<1-x>N_x from vapor phase was performed by thermodynamic analysis and the first-principles calculations for growth surface. The calculated results suggest that the incorporation of nitrogen is suppressed by the effect of the lattice constraint from Ge substrate, and is promoted by increasing the input partial pressure of group-III element. And first-principles-based calculations for the growth surface under H_2 atmosphere show that nitrogen is easier to substitute for As in the surface site bonded with hydrogen, which could be the origin of H-related defects in a thin film. These results obtained by the theoretical analysis provide information on the suitable growth conditions for the growth of this material with high quality.

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