Characterization of sputtered AlN amorphous films and their applications to AlGaN/GaN MIS-HFET (電子デバイス) Characterization of sputtered AlN amorphous films and their applications to AlGaN/GaN MIS-HFET

Abstract

AlN amorphous films were prepared by RF magnetron sputtering, and applied to the AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors (MIS-HFETs) as a gate insulator. X-ray photoelectron spectroscopy (XPS) was used to characterize the AlN films, showing their chemical bonds and the bandgap by Nls electron energy loss spectroscopy. The AlGaN/GaN MIS-HFET with a gate length of 150 nm was successfully fabricated, exhibiting low gate leakage currents for both reverse and forward biases, which are at least four orders of magnitude lower than those of reference Schottky-HFETs. These results support a possibility of sputtered amorphous AlN as a gate insulator. Moreover, AlN/AlGaN interface states were investigated by the frequency dispersion in the C-V characteristics.

Journal

IEICE technical report. Electron devices   [List of Volumes]

IEICE technical report. Electron devices 111(167), 13-16, 2011-07-22  [Table of Contents]

The Institute of Electronics, Information and Communication Engineers

References:  9

You must have a user ID to see the references.If you already have a user ID, please click "Login" to access the info.New users can click "Sign Up" to register for an user ID.

Preview

Preview

Codes

  • NII Article ID (NAID) :
    110008800751
  • NII NACSIS-CAT ID (NCID) :
    AN10012954
  • Text Lang :
    ENG
  • Article Type :
    ART
  • ISSN :
    09135685
  • NDL Article ID :
    11200090
  • NDL Source Classification :
    ZN33(科学技術--電気工学・電気機械工業--電子工学・電気通信)
  • NDL Call No. :
    Z16-940
  • Databases :
    CJP  NDL  NII-ELS 

Share