Characterization of sputtered AlN amorphous films and their applications to AlGaN/GaN MIS-HFET (電子デバイス) Characterization of sputtered AlN amorphous films and their applications to AlGaN/GaN MIS-HFET

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Author(s)

Abstract

AlN amorphous films were prepared by RF magnetron sputtering, and applied to the AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors (MIS-HFETs) as a gate insulator. X-ray photoelectron spectroscopy (XPS) was used to characterize the AlN films, showing their chemical bonds and the bandgap by Nls electron energy loss spectroscopy. The AlGaN/GaN MIS-HFET with a gate length of 150 nm was successfully fabricated, exhibiting low gate leakage currents for both reverse and forward biases, which are at least four orders of magnitude lower than those of reference Schottky-HFETs. These results support a possibility of sputtered amorphous AlN as a gate insulator. Moreover, AlN/AlGaN interface states were investigated by the frequency dispersion in the C-V characteristics.

Journal

  • IEICE technical report

    IEICE technical report 111(167), 13-16, 2011-07-22

    The Institute of Electronics, Information and Communication Engineers

References:  9

  • <no title>

    HASHIZUME T.

    Appl. Phys. Lett. 33, 2952, 2003

    Cited by (1)

  • <no title>

    LIU C.

    Appl. Phys. Lett. 88, 173504, 2006

    Cited by (1)

  • <no title>

    MAEDA N.

    Jpn. J. Appl. Phys. 44, L646, 2005

    Cited by (1)

  • <no title>

    LIU Y.

    Phys. Status Solidi C 0, 69, 2002

    Cited by (1)

  • <no title>

    UEDA D.

    65th Annual Device Research Conference, 2007 27, 2007

    Cited by (1)

  • <no title>

    TANAKA N.

    Phys. Status Solidi C 5, 2972, 2008

    Cited by (1)

  • <no title>

    TANAKA N.

    Jpn. J. Appl. Phys. 48, 04C099, 2009

    Cited by (1)

  • <no title>

    STOKLAS R.

    J. Vac. Sci. Tech. B 29, 01A809, 2011

    Cited by (1)

  • <no title>

    NICOLLIAN E. H.

    MOS (Metal Oxide Semiconductor) Physics and Technology, 1982

    Cited by (1)

Codes

  • NII Article ID (NAID)
    110008800751
  • NII NACSIS-CAT ID (NCID)
    AN10012954
  • Text Lang
    ENG
  • Article Type
    ART
  • ISSN
    09135685
  • NDL Article ID
    11200090
  • NDL Source Classification
    ZN33(科学技術--電気工学・電気機械工業--電子工学・電気通信)
  • NDL Call No.
    Z16-940
  • Data Source
    CJP  NDL  NII-ELS 
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