Formation of Ultrananocrystalline Diamond Grains by Physical Vapor Deposition and their Enhanced Growth by Doping(<Special Issue>Diamond Growth)

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  • Ohmagari Shinya
    Department of Applied Science for Electronics and Materials, Kyushu University
  • Hanada Kenji
    Research Center for Synchrotron Light Applications, Kyushu University
  • Katamune Yuki
    Department of Applied Science for Electronics and Materials, Kyushu University
  • Yoshida Tomohiro
    Department of Applied Science for Electronics and Materials, Kyushu University
  • Yoshitake Tsuyoshi
    Department of Applied Science for Electronics and Materials, Kyushu University:Research Center for Synchrotron Light Applications, Kyushu University

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Other Title
  • 物理気相成長法による超ナノ微結晶ダイヤモンドの生成とドーピングによる結晶粒成長促進効果(<特集>ダイヤモンド成長)
  • 物理気相成長法による超ナノ微結晶ダイヤモンドの生成とドーピングによる結晶粒成長促進効果
  • ブツリ キソウ セイチョウホウ ニ ヨル チョウナノ ビケッショウ ダイヤモンド ノ セイセイ ト ドーピング ニ ヨル ケッショウリュウ セイチョウ ソクシン コウカ

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Abstract

This article overviews the formation of ultrananocrystalline diamond (UNCD) by pulsed laser deposition (PLD) and coaxial arc plasma deposition (CAPD), each of which is a kind of physical vapor deposition (PVD). The UNCD formation by these methods need not the pre-treatment of substrates wherein diamond nuclei are seeded using diamond powder, which is a distinctive difference from that by CVD. From the observation of plasma process by optical emission spectroscopy and the structural evaluation of films for the preparation conditions, we have found the followings: 1) a supersaturated condition comprising highly energetic C^+ ions should have an important role in the nucleation of UNCD grains, 2) initial growth might be stabilize and facilitated by the hydrogen termination of surface dangling bonds, 3) grain is enlarged by boron-incorporation, which is consistent with the prediction of a defect-induced diamond growth model.

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