D215 GaAs単結晶成長に及ぼす融液流動および温度分布の影響(OS-2:複合対流)

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  • D215 Effect of melt flow and temperature distribution on GaAs growth

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2D computer simulation assists in the decision of growth parameters to reduce the crystal defects of GaAs crystal in liquid encapsulated Czochralski (LEC) method. In this paper, we numerically investigated the reason why the 450mm-long crystal has more crystal defects than the 350mm-long crystal by comparing heat exchange, temperature distribution and velocity vector in the source melt at several stage of the growth. The simulation results indicated that large heat release from crystal and small heat release from crucible bottom are advantageous to the crystal growth with few defects. It is also necessary that forced convection and natural convection of GaAs melt is delicately controlled by the crucible rotation rate and the temperature distribution.

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